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FPD2250SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1850MHZ):
* * * * * * 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency
Datasheet v3.0
PACKAGE:
FPD2250SOT89E - RoHS compliant
GENERAL DESCRIPTION:
The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 2250 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
* * * Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small-Signal Gain Power-Added Efficiency
SYMBOL
P1dB SSG PAE
CONDITIONS
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; POUT = P1dB
MIN
28 12
TYP
29 14 50
MAX
UNITS
dBm dB %
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS
1.2 1.0
1.4
dB
Output Third-Order Intercept Point (from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 43 44 560 700 1.1 600 1 0.7 12 12 1.0 18 16 50 10 1.3 825 mA mA mS A V V V C/W dBm
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD|
VDS = 2 V; VGS = 0 V VDS = 2 V; VGS +1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 2.25 mA IGS = 2.25 mA IGD = 2.25 mA
RJC
Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power 2
1
SYMBOL
VDS VGS IDS IG PIN TCH TSTG PTOT Comp. 3
TEST CONDITIONS
-3V < VGS < +0V 0V < VDS < +8V For VDS < 2V Forward or reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions 2 or more Max. Limits
ABSOLUTE MAXIMUM
8V -3V IDss 22mA 525mW 175C -55C to 150C 2.5W 5dB
Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression Simultaneous Combination of Limits
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 2.5 - (0.02W/C) x TPACK where TPACK= source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65C carrier temperature: PTOT = 2.5W - (0.02 x (65 - 22)) = 1.64W
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A class A/B bias of 25-33% of IDSS to achieve better OIP3 and Noise Figure performance is suggested.
* *
2
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Power Transfer Characteristric VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
30.0 3.75 3.25
55.0%
Pout (dBm) Comp Point
Drain Efficiency and PAE VDS = 5V IDS = 50% IDSS at f = 1.85 GHz
65.0% 65.0%
29.0
55.0% PAE Eff. Dain Efficiency (%) 45.0%
2.75 Gain Compression (dB) 2.25
45.0% PAE (%)
Output Power (dBm)
28.0
27.0
1.75 1.25 0.75
35.0%
35.0%
26.0
25.0%
25.0%
25.0 0.25 24.0
15.0%
15.0%
-0.25 -0.75 9 11 13 15 Input Power (dBm) 17 19
5.0% 9 11 13 15 Input Power (dBm) 17 19 5.0%
23.0
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression.
Typical Intermodulation Performance VDS =5V IDS = 50% IDSS at f = 1.85 GHz
20.0 19.0 18.0 3rd Order IM Products (dBc) -48 Output Power (dBm) 17.0 16.0 15.0 14.0 Pout (dBm) 13.0 -56 12.0 11.0 10.0 -2.5 -1.5 -0.5 0.6 1.6 Input Power (dBm) 2.6 3.6 4.6 -58 -60 3rds (dBc) -50 -52 -54 -44 -46
30 25 20
FPD2250SOT89 5V / 50%IDSS
MSG S21
Gain
15 10 5 0 1 2 3 4 5 Frequency (GHz) 6 7 8
Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB + 14dBm. This IMD enhancement is affected by the quiescent bias and the matching applied to the device.
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD1500SOT89 0.60
0.50
0.40
0.30
0.20
VG=-1.5V VG-1.25V VG=-1.00V VG=-0.75V VG=-0.5V VG=-0.25V VG=0V
0.10
Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits.
Drain-Source Current (A)
0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Drain-Source Voltage (V)
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
TYPICAL OUTPUT PLANE POWER CONTOURS: (VDS = 5v, IDS = 50%IDSS)
FPD2250SOT89 POWER CONTUORS 1850MHz
0.6
FPD2250SOT89 POWER CONTUORS 900MHz
6 0.
Swp Max 145
2. 0
Swp Max 115
2. 0
1.0
0.8
3.0
0.8
1.0
4.0
0.2
24dBm 25dBm 26dBm 27dBm
0.4
5.0
10.0
10.0
0.2
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
28dBm
29dBm
-10.0
29dBm
-0.2
-0
.4
.4 -0
.0 -2
-0.6
-0 .6
. -2
0
Swp Min 1
Swp Min 1
-0.8
1850 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) s: 0.59 -177.5 0.25 - j0.02 (normalized) 12.5 - j1.0 Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown.
-1.0
900 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) s: 0.67 103.6 0.30 + j0.74 (normalized) 15 + j37.0 Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown.
TYPICAL SCATTERING PARAMETERS (50 SYSTEM):
FPD2250SOT89 5V / 50%IDSS
6 0.
FPD2250SOT89 5V / 50%IDSS
6 0.
7 GHz
3. 0
0. 4
4 GHz 3.5 GHz 3 GHz 2.5 GHz
0 .2
0. 4
2. 0
2. 0
5 GHz
6 GHz
Swp Max 8GHz
-1.0
-0.8
Swp Max 8GHz
1.0
0. 8
0. 8
1.0
5 GHz
4. 0
0 .2
6 GHz
7 GHz
3.
0
4 GHz 3 GHz
5. 0
10.0
2.0
10.0
2.0
4.0 5.0
0.2
0.4
0.6
0.8
1.0
3.0
0
1 GHz
1.5 GHz
2
-10. 0
.0 -2
-0 .
-0 .8
Swp Min 0.5GHz
-1.0
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
-1.0
S11
-0 .8
S22
-0 .
6
.0 -2
. -0
4
. -0
6
Swp Min 0.5GHz
Website: www.filtronic.com
-
4
-4 .0 -5. 0
3. 0
-4 .0 -5 . 0
.2 -01 GHz
- 0.
4.0 5.0
0.2
0.4
0.6
0.8
1.0
3.0
0
10.0
2 GHz
2 GHz
-5. 0
2 -0.
-4 .0
10.0
-3 .0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0. 4
-10. 0
-3
.0
-10.0
-5.0
-4.0
-3 .0
0. 4
0 3.
23dBm 24dBm 26dBm 27dBm 28dBm 25dBm
0 4.
5.0
0.2
10.0
4.
0
5.0
10.0
FPD2250SOT89
Datasheet v3.0
S-PARAMETERS: BIASED @ 5V, 50%IDSS
FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 S11m 0.823 0.772 0.758 0.753 0.752 0.745 0.746 0.740 0.743 0.744 0.740 0.751 0.750 0.755 0.762 0.762 0.781 0.788 0.803 0.809 0.810 0.828 0.880 0.862 0.878 0.853 0.854 0.851 0.847 0.856 0.869 0.873 0.868 0.878 0.885 0.886 0.894 0.897 0.899 0.902 0.905 0.906 0.907 0.912 0.916 0.915 0.912 S11a -119.1 -142.8 -157.5 -168.0 -178.1 174.3 166.8 159.4 152.6 145.5 138.4 132.4 125.7 119.7 113.4 107.4 102.3 97.0 92.1 86.7 82.3 78.1 71.8 67.8 62.1 58.8 55.3 51.5 47.7 43.8 39.4 33.4 28.1 23.1 17.4 12.5 7.8 3.5 0.0 -3.1 -6.0 -8.5 -10.9 -13.0 -15.8 -18.3 -21.2 S21m 16.103 11.584 9.092 7.526 6.335 5.505 4.905 4.410 4.030 3.702 3.409 3.173 2.953 2.753 2.573 2.408 2.260 2.119 2.000 1.896 1.801 1.718 1.701 1.610 1.540 1.452 1.385 1.337 1.283 1.247 1.203 1.145 1.094 1.043 0.995 0.949 0.897 0.851 0.812 0.771 0.743 0.711 0.684 0.662 0.644 0.632 0.620 S21a 109.2 97.3 87.6 79.7 72.9 65.7 59.1 52.7 46.3 40.4 33.7 27.4 21.2 15.0 9.1 2.9 -2.7 -8.2 -13.6 -18.9 -24.3 -29.3 -35.9 -40.7 -47.5 -51.7 -56.3 -60.9 -65.9 -71.0 -76.8 -82.4 -87.5 -92.9 -97.9 -102.8 -107.9 -112.4 -116.8 -121.0 -125.0 -129.0 -132.7 -136.8 -140.1 -144.0 -147.9 S12m 0.027 0.033 0.038 0.044 0.049 0.054 0.060 0.066 0.072 0.078 0.083 0.089 0.095 0.100 0.104 0.108 0.112 0.115 0.118 0.122 0.125 0.129 0.137 0.138 0.142 0.142 0.144 0.147 0.148 0.153 0.155 0.155 0.155 0.155 0.155 0.154 0.153 0.151 0.149 0.146 0.142 0.137 0.135 0.133 0.133 0.133 0.136 S12a 46.5 44.3 42.7 41.6 40.2 37.8 35.6 32.8 29.4 26.8 22.5 18.7 14.7 10.7 6.4 2.1 -1.8 -5.8 -9.6 -13.3 -17.2 -20.8 -26.3 -29.6 -35.4 -38.2 -41.7 -45.3 -49.2 -53.4 -58.3 -62.8 -67.5 -72.2 -76.6 -81.1 -85.9 -90.3 -95.2 -100.3 -104.9 -109.0 -112.4 -115.3 -118.3 -121.2 -124.8 S22m 0.459 0.450 0.455 0.445 0.445 0.447 0.439 0.439 0.433 0.436 0.436 0.436 0.450 0.459 0.473 0.487 0.497 0.512 0.521 0.532 0.537 0.548 0.589 0.583 0.599 0.589 0.584 0.578 0.580 0.591 0.602 0.620 0.634 0.655 0.671 0.687 0.702 0.715 0.724 0.731 0.733 0.743 0.746 0.749 0.739 0.734 0.723 S22a -159.0 -167.9 -176.0 178.5 172.0 167.4 162.5 157.4 152.2 146.2 140.8 134.3 128.5 122.9 117.7 112.8 108.0 103.2 98.7 94.6 90.5 86.8 82.7 79.0 72.5 67.5 61.7 56.7 51.6 46.6 41.0 36.4 31.8 28.2 24.5 22.0 19.5 17.2 14.2 11.1 8.5 5.9 3.1 0.1 -3.4 -6.9 -11.4
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD2250SOT89
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimeters - mm)
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
PCB Foot Print
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
ORDERING INFORMATION:
PART NUMBER
FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE
DESCRIPTION
Packaged pHEMT RoHS Compliant Packaged pHEMT RoHS Compliant Packaged pHEMT with enhanced passivation (Recommended for New Designs)
Units in inches
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request.
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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